Home / Articles / Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

Konstantin V. Feklistov 1, 2
Konstantin V. Feklistov
,  , 
Alexander A. Shklyaev 1, 4
Alexander A. Shklyaev
,  ,  ,  ,  , 
Alexey M. Pugachev 6
Alexey M. Pugachev
, 
Dmitriy G. Esaev 1
Dmitriy G. Esaev
1 Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Acad. Lavrentieva Ave., Novosibirsk 630090, Russian Federation
2 Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, 11 Acad. Lavrentieva Ave., Novosibirsk 630090, Russian Federation
3 Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, 1 Acad. Koptyug Ave., Novosibirsk 630090, Russian Federation
4 Novosibirsk State University, 1 Pirogova Str., Novosibirsk 630090, Russian Federation
5 Novosibirsk State Technical University, 20 Karla Marksa Ave., Novosibirsk 630073, Russian Federation
6 Academ Infrared LLC, 9 Uchenykh Str., Novosibirsk 630090, Russian Federation
10.3897/j.moem.9.2.109980
Published 5 July 2023
Communication , Volume 9, Issue 2, 57-68
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Feklistov K. V. et al. Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films // Modern Electronic Materials. 2023. Vol. 9. No. 2. pp. 57-68.
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Feklistov K. V., Lemzyakov A. G., Shklyaev A. A., Protasov D. Y., Deryabin A. S., Spesivsev E. V., Gulyaev D. V., Pugachev A. M., Esaev D. G. Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films // Modern Electronic Materials. 2023. Vol. 9. No. 2. pp. 57-68.
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TY - JOUR
DO - 10.3897/j.moem.9.2.109980
UR - https://moem.colab.ws/publications/10.3897/j.moem.9.2.109980
TI - Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films
T2 - Modern Electronic Materials
AU - Feklistov, Konstantin V.
AU - Lemzyakov, Aleksey G.
AU - Shklyaev, Alexander A.
AU - Protasov, Dmitry Yu.
AU - Deryabin, Alexander S.
AU - Spesivsev, Evgeny V.
AU - Gulyaev, Dmitry V.
AU - Pugachev, Alexey M.
AU - Esaev, Dmitriy G.
PY - 2023
DA - 2023/07/05
PB - НИТУ МИСИС
SP - 57-68
IS - 2
VL - 9
ER -
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@article{2023_Feklistov,
author = {Konstantin V. Feklistov and Aleksey G. Lemzyakov and Alexander A. Shklyaev and Dmitry Yu. Protasov and Alexander S. Deryabin and Evgeny V. Spesivsev and Dmitry V. Gulyaev and Alexey M. Pugachev and Dmitriy G. Esaev},
title = {Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films},
journal = {Modern Electronic Materials},
year = {2023},
volume = {9},
publisher = {НИТУ МИСИС},
month = {Jul},
url = {https://moem.colab.ws/publications/10.3897/j.moem.9.2.109980},
number = {2},
pages = {57--68},
doi = {10.3897/j.moem.9.2.109980}
}
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Feklistov, Konstantin V., et al. “Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films.” Modern Electronic Materials, vol. 9, no. 2, Jul. 2023, pp. 57-68. https://moem.colab.ws/publications/10.3897/j.moem.9.2.109980.
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Keywords

band discontinuity
band structure
barrier
electrons
erbium
heterojunction
holes
indium oxide
injection
silicon
thermoemission
thin films

Abstract

In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.

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