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Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge

P. Harikrishnan 1
P. Harikrishnan
, 
P. Sivakumar 1
P. Sivakumar
1 Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Anand Nagar, Krishnankoil, Tamil Nadu, 626126, India
10.3897/j.moem.11.2.137432
Published 16 July 2025
Communication , Volume 11, Issue 2, 125-136
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Harikrishnan P., Sivakumar P. Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge // Modern Electronic Materials. 2025. Vol. 11. No. 2. pp. 125-136.
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Harikrishnan P., Sivakumar P. Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge // Modern Electronic Materials. 2025. Vol. 11. No. 2. pp. 125-136.
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TY - JOUR
DO - 10.3897/j.moem.11.2.137432
UR - https://moem.colab.ws/publications/10.3897/j.moem.11.2.137432
TI - Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge
T2 - Modern Electronic Materials
AU - Harikrishnan, P.
AU - Sivakumar, P.
PY - 2025
DA - 2025/07/16
PB - НИТУ МИСИС
SP - 125-136
IS - 2
VL - 11
ER -
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@article{2025_Harikrishnan,
author = {P. Harikrishnan and P. Sivakumar},
title = {Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge},
journal = {Modern Electronic Materials},
year = {2025},
volume = {11},
publisher = {НИТУ МИСИС},
month = {Jul},
url = {https://moem.colab.ws/publications/10.3897/j.moem.11.2.137432},
number = {2},
pages = {125--136},
doi = {10.3897/j.moem.11.2.137432}
}
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Harikrishnan, P., and P. Sivakumar. “Evaluating the effects of doping dynamics to unveiling the GaN MOSFET edge.” Modern Electronic Materials, vol. 11, no. 2, Jul. 2025, pp. 125-136. https://moem.colab.ws/publications/10.3897/j.moem.11.2.137432.
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Keywords

capacitance-voltage (C–V)
dopant profile
finite element analysis (FEA)
gallium nitride (GaN)
III–V semiconductor device
MOSFET
sentaurus technology computer-aided design (TCAD)
spreading resistance profiling (SRP)

Abstract

This study presents a comparative performance analysis of GaAs, InP, and GaN-based MOSFETs using Spreading Resistance Profiling (SRP), Capacitance–Voltage (C–V) simulation, and Finite Element Analysis (FEA) within a sentaurus technology computer-aided design (TCAD) environment. The results show that GaN MOSFETs achieve the highest on-current (450 µA) and peak gm (400 µS), but exhibit a slightly higher ON-resistance (5 Ω) compared to GaAs (4.44 Ω) and InP (4.21 Ω). In terms of VTH uniformity, GaN demonstrates superior dopant stability with the lowest standard deviation (0.143 V), followed by InP (0.213 V) and GaAs (0.266 V). These findings highlight the trade-offs between current drive, resistance, and variability among III–V materials, with GaN offering strong performance and reliability characteristics suitable for secure and thermally stable semiconductor applications.

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