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In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

,  , 
Konstantin E. Zakhozhev 1, 2
Konstantin E. Zakhozhev
,  ,  , 
Anton K. Gutakovskii 1
Anton K. Gutakovskii
,  ,  , 
Dmitry V. Sheglov 1
Dmitry V. Sheglov
, 
Alexander V. Latyshev 1, 2
Alexander V. Latyshev
1 Rzhanov Institute of Semiconductor Physics of the Siberian Branch of Russian Academy of Sciences, 13 Academician Lavrentieva Ave., Novosibirsk 630090, Russian Federation
2 Novosibirsk State University, 1 Pirogova Str., Novosibirsk 630090, Russian Federation
3 V.S. Sobolev Institute of Geology and Mineralogy of the Siberian Branch of Russian Academy of Sciences, 3 Academician Koptyuga Ave., Novosibirsk 630090, Russian Federation
10.3897/j.moem.10.4.144317
Published 30 December 2024
Communication , Volume 10, Issue 4, 251-261
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Ponomarev S. A. et al. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 251-261.
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Ponomarev S. A., Rogilo D. I., Zakhozhev K. E., Nasimov D. A., Kurus N. N., Gutakovskii A. K., Kokh K. A., Milekhin A. G., Sheglov D. V., Latyshev A. V. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 251-261.
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TY - JOUR
DO - 10.3897/j.moem.10.4.144317
UR - https://moem.colab.ws/publications/10.3897/j.moem.10.4.144317
TI - In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides
T2 - Modern Electronic Materials
AU - Ponomarev, Sergei A.
AU - Rogilo, Dmitry I.
AU - Zakhozhev, Konstantin E.
AU - Nasimov, Dmitry A.
AU - Kurus, Nina N.
AU - Gutakovskii, Anton K.
AU - Kokh, Konstantin A.
AU - Milekhin, Alexander G.
AU - Sheglov, Dmitry V.
AU - Latyshev, Alexander V.
PY - 2024
DA - 2024/12/30
PB - НИТУ МИСИС
SP - 251-261
IS - 4
VL - 10
ER -
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@article{2024_Ponomarev,
author = {Sergei A. Ponomarev and Dmitry I. Rogilo and Konstantin E. Zakhozhev and Dmitry A. Nasimov and Nina N. Kurus and Anton K. Gutakovskii and Konstantin A. Kokh and Alexander G. Milekhin and Dmitry V. Sheglov and Alexander V. Latyshev},
title = {In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides},
journal = {Modern Electronic Materials},
year = {2024},
volume = {10},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.10.4.144317},
number = {4},
pages = {251--261},
doi = {10.3897/j.moem.10.4.144317}
}
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Ponomarev, Sergei A., et al. “In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides.” Modern Electronic Materials, vol. 10, no. 4, Dec. 2024, pp. 251-261. https://moem.colab.ws/publications/10.3897/j.moem.10.4.144317.
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Keywords

in situ reflection electron microscopy
metal chalcogenides
surface

Abstract

Using in situ reflection electron microscopy we have presented latest studies of Si(111) and Bi2Se3(0001) surface processes during sublimation, homo- and heteroepitaxial growth of layered metal chalcogenides. A structural kinetic diagram of interaction between a selenium molecular beam and Si(111) surface has been demonstrated. We have shown congruent sublimation caused by annealing of Bi2Se3(0001) substrates in a selenium flux, visualized and described layer by layer homoepitaxial Bi2Se3 growth. We have presented techniques of layered SnSe2 and In2Se3 growth on Si(111) and Bi2Se3(0001) surfaces and shown that heteroepitaxial growth starts with the 2D islands formation. The nucleation and growth of an impurity-induced phase in the form of 0.4 nm high 2D islands during high-temperature submonolayer indium deposition on Bi2Se3(0001) under exposure to Se molecular beam has been demonstrated.