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Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing

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1 National Research Tomsk State University, 36 Lenin Ave., Tomsk 634050, Russian Federation
2 Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentiev Ave., Novosibirsk 630090, Russian Federation
10.3897/j.moem.10.4.140641
Published 30 December 2024
Communication , Volume 10, Issue 4, 243-250
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Hervieu Y. Y. et al. Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 243-250.
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Hervieu Y. Y., Yesin M. Y., Deryabin A. S., Kolesnikov A. V., Nikiforov A. I. Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 243-250.
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TY - JOUR
DO - 10.3897/j.moem.10.4.140641
UR - https://moem.colab.ws/publications/10.3897/j.moem.10.4.140641
TI - Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing
T2 - Modern Electronic Materials
AU - Hervieu, Yuri Yu.
AU - Yesin, Michael Yu.
AU - Deryabin, Alexander S.
AU - Kolesnikov, Alexey V.
AU - Nikiforov, Alexander I.
PY - 2024
DA - 2024/12/30
PB - НИТУ МИСИС
SP - 243-250
IS - 4
VL - 10
ER -
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@article{2024_Hervieu,
author = {Yuri Yu. Hervieu and Michael Yu. Yesin and Alexander S. Deryabin and Alexey V. Kolesnikov and Alexander I. Nikiforov},
title = {Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing},
journal = {Modern Electronic Materials},
year = {2024},
volume = {10},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.10.4.140641},
number = {4},
pages = {243--250},
doi = {10.3897/j.moem.10.4.140641}
}
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Hervieu, Yuri Yu., et al. “Dynamics of monoatomic steps on the Si(100) surface during MBE growth and post-growth annealing.” Modern Electronic Materials, vol. 10, no. 4, Dec. 2024, pp. 243-250. https://moem.colab.ws/publications/10.3897/j.moem.10.4.140641.
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Keywords

adatoms
diffraction
kinks
molecular beam epitaxy
Si(100) surface
steps
terraces

Abstract

The dynamics of monoatomic steps on the Si(100) vicinal surface during molecular beam epitaxy (MBE) growth and annealing is studied based on the analysis of reflection high-energy electron diffraction intensity variations. During growth, the initially equally spaced A- and B-steps are getting closer: the width of the A-terraces decreases to a certain minimum value, which increases with increasing growth temperature. The number of Si monolayers deposited until the minimum distance between the A- and B steps is reached increases monotonically with increasing temperature.