Home / Articles / Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features

Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features

, 
Gaji Gajiev 1
Gaji Gajiev
, 
Daud Selimov 1
Daud Selimov
, 
Sadrudin Gadzhimuradov 1
Sadrudin Gadzhimuradov
, 
Sagim Suleymanov 1
Sagim Suleymanov
, 
Ştefan Ţălu 2
Ştefan Ţălu
, 
Robert S. Matos 3
Robert S. Matos
, 
Henrique D. da Fonseca Filho 4
Henrique D. da Fonseca Filho
1 Amirkhanov Institute of Physics, Dagestan Federal Research Center of the Russian Academy of Sciences, 94 Magomed Yaragsky Str., Makhachkala, Republic of Dagestan 367003, Russian Federation
2 Technical University of Cluj-Napoca, Directorate of Research, Development and Innovation Management, 15 Constantin Daicoviciu Str., Cluj-Napoca 400020, Romania
3 Universidade Federal do Amapá, Amazonian Materials Group, Departamento de Física, 68903-419, Macapá, Amapá, Brazil
4 Universidade Federal do Amazonas, Laboratory of Synthesis of Nanomaterials and Nanoscopy, Departamento de Física, 69067-005, Manaus, Amazonas, Brazil
10.3897/j.moem.10.4.136067
Published 30 December 2024
Communication , Volume 10, Issue 4, 207-216
0
Share
Cite this
GOST
 | 
Cite this
GOST
Copy cite
Ramazanov S. et al. Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 207-216.
GOST all authors (up to 50)
Copy cite
Ramazanov S., Gajiev G., Selimov D., Gadzhimuradov S., Suleymanov S., Ţălu Ş., Matos R. S., da Fonseca Filho H. D. Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features // Modern Electronic Materials. 2024. Vol. 10. No. 4. pp. 207-216.
RIS
 | 
Cite this
RIS
Copy cite
TY - JOUR
DO - 10.3897/j.moem.10.4.136067
UR - https://moem.colab.ws/publications/10.3897/j.moem.10.4.136067
TI - Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features
T2 - Modern Electronic Materials
AU - Ramazanov, Shikhgasan
AU - Gajiev, Gaji
AU - Selimov, Daud
AU - Gadzhimuradov, Sadrudin
AU - Suleymanov, Sagim
AU - Ţălu, Ştefan
AU - Matos, Robert S.
AU - da Fonseca Filho, Henrique D.
PY - 2024
DA - 2024/12/30
PB - НИТУ МИСИС
SP - 207-216
IS - 4
VL - 10
ER -
BibTex
 | 
Cite this
BibTex (up to 50 authors)
Copy cite
@article{2024_Ramazanov,
author = {Shikhgasan Ramazanov and Gaji Gajiev and Daud Selimov and Sadrudin Gadzhimuradov and Sagim Suleymanov and Ştefan Ţălu and Robert S. Matos and Henrique D. da Fonseca Filho},
title = {Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features},
journal = {Modern Electronic Materials},
year = {2024},
volume = {10},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.10.4.136067},
number = {4},
pages = {207--216},
doi = {10.3897/j.moem.10.4.136067}
}
MLA
Cite this
MLA
Copy cite
Ramazanov, Shikhgasan, et al. “Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features.” Modern Electronic Materials, vol. 10, no. 4, Dec. 2024, pp. 207-216. https://moem.colab.ws/publications/10.3897/j.moem.10.4.136067.
Views / Visits / Downloads
60 / 60 / 38

Keywords

atomic layer deposition
BiFeO3
Minkowski functionals
negative differential resistance
resistive switching
TiO2 nanotubes

Abstract

The structure BiFeO3/TiO2–NTs (BFOT) obtained using the atomic layer deposition. During the Anatase/Rutile phase transformation; there is a redistribution of Fe/Ti atoms, resulting in the formation of local inhomogeneities and charge trapping centres. Studies of the resistive switching effect showed nonlinear current-voltage characteristics. The negative differential resistance probably arises from the oxide dielectric layer of BFO, thin regions of which participate in the tunneling process. The BFOT surface exhibits topographic variations with spatial patterns that conform to normality, and the distribution of topographic heights displays a quasi-normal behavior. The self-affine attributes of the BFOT film are validated by the exponential reduction in autocorrelation functions, and the Minkowski functionals underscore the intricate and irregular nature of the film's topographic patterns.

References

3.
Alikhanov N.M., Rabadanov M.K., Orudzhev F.F., Gadzhimagomedov S.K., Emirov R.M., Sadykov S.A., Kallaev S.N., Ramazanov S.M., Abdulvakhidov K.G., Sobola D.
Journal of Materials Science: Materials in Electronics, 2021
4.
Park T., Papaefthymiou G.C., Viescas A.J., Moodenbaugh A.R., Wong S.S.
Nano Letters, 2007
5.
Chua L.
IEEE Transactions on Circuit Theory, 1971
6.
He S., Liu G., Zhu Y., Ma X., Sun J., Kang S., Yan S., Chen Y., Mei L., Jiao J.
RSC Advances, 2017
8.
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Schroeder U., Materano M., Mittmann T., Lomenzo P.D., Mikolajick T., Toriumi A.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 2019
9.
Jiang J., Nguyen L.T., Nguyen T.D., Luong D.H., Kim D.Y., Jin Y., Kim P., Duong D.L., Lee Y.H.
Physical Review B, 2021
11.
Cai Y., Zhang J., Yan M., Jiang Y., Jawad H., Tian B., Wang W., Zhan Y., Qin Y., Xiong S., Cong C., Qiu Z., Duan C., Liu R., Hu L., et. al.
npj Flexible Electronics, 2022
12.
Orudzhev F., Ramazanov S., Sobola D., Isaev A., Wang C., Magomedova A., Kadiev M., Kaviyarasu K.
Nanomaterials, 2020
13.
Orudzhev F.F., Ramazanov S.M., Isaev A.B., Alikhanov N.M., Sobola D., Presniakov M.Y., Kaviyarasu K.
Materials Today: Proceedings, 2021
17.
Lu C.-., Chang L.-., Lu Y.-., Lu F.-.
Ceramics International, 2009
18.
Ramazanov S., Sobola D., Ţălu Ş., Orudzev F., Arman A., Kaspar P., Dallaev R., Ramazanov G.
Microscopy Research and Technique, 2021
19.
136067_B19
21.
Matos R.S., Pinto E.P., Pires M.A., Ramos G.Q., Ţălu Ş., Lima L.S., da Fonseca Filho H.D.
Microscopy (Oxford, England), 2023
23.
Pinto E.P., Matos R.S., Pires M.A., Lima L.D., Ţălu Ş., da Fonseca Filho H.D., Ramazanov S., Solaymani S., Larosa C.
Fractal and Fractional, 2023
24.
Ţălu Ş., Nikola P., Sobola D., Achour A., Solaymani S.
Journal of Materials Science: Materials in Electronics, 2017
25.
Ramos G.Q., Matos R.S., Das A., Kumar S., Ţălu Ş., da Fonseca Filho H.D.
Fractal and Fractional, 2022
26.
Matos R.S., Ferreira N.S., Ţălu Ş., Ghaderi A., Solaymani S., Pires M.A., Sanches E.A., da Fonseca Filho H.D.
Symmetry, 2022
27.
Kröger F.A., Vink H.J.
Solid State Physics: Advances in Research and Applications, 1956
28.
Shen L., Cheng X., Wang Z., Cao D., Li zheng L.Z., Wang Q., Zhang D., Li J., Yu Y.
RSC Advances, 2016
29.
Felix A.B., Pacheco M., Orellana P., Latgé A.
Physical Review B, 2019
30.
Ramazanov S., Orudzhev F., Gajiev G., Holcman V., Matos R.S., da Fonseca Filho H.D., Ţălu Ş., Selimov D.
Applied Surface Science, 2024
31.
Chen P., Zhang X., Liu Q., Liu M.
Applied Physics A: Materials Science and Processing, 2022