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Growth of 100 mm indium antimonide single crystals by modified Czochralski technique

Roman Yu. Kozlov 1
Roman Yu. Kozlov
, 
Svetlana S. Kormilitsina 1
Svetlana S. Kormilitsina
, 
Elena V. Molodtsova 1
Elena V. Molodtsova
, 
Eugene O. Zhuravlev 1
Eugene O. Zhuravlev
1 Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), Elektrodnaya Str., Moscow 111524, Russia
Published 30 June 2021
Communication , Volume 7, Issue 2, 73-78
2
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Kozlov R. Y. et al. Growth of 100 mm indium antimonide single crystals by modified Czochralski technique // Modern Electronic Materials. 2021. Vol. 7. No. 2. pp. 73-78.
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Kozlov R. Y., Kormilitsina S. S., Molodtsova E. V., Zhuravlev E. O. Growth of 100 mm indium antimonide single crystals by modified Czochralski technique // Modern Electronic Materials. 2021. Vol. 7. No. 2. pp. 73-78.
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TY - JOUR
DO - 10.3897/j.moem.7.2.76286
UR - https://moem.colab.ws/publications/10.3897/j.moem.7.2.76286
TI - Growth of 100 mm indium antimonide single crystals by modified Czochralski technique
T2 - Modern Electronic Materials
AU - Kozlov, Roman Yu.
AU - Kormilitsina, Svetlana S.
AU - Molodtsova, Elena V.
AU - Zhuravlev, Eugene O.
PY - 2021
DA - 2021/06/30
PB - НИТУ МИСИС
SP - 73-78
IS - 2
VL - 7
ER -
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BibTex (up to 50 authors)
@article{2021_Kozlov,
author = {Roman Yu. Kozlov and Svetlana S. Kormilitsina and Elena V. Molodtsova and Eugene O. Zhuravlev},
title = {Growth of 100 mm indium antimonide single crystals by modified Czochralski technique},
journal = {Modern Electronic Materials},
year = {2021},
volume = {7},
publisher = {НИТУ МИСИС},
month = {Jun},
url = {https://moem.colab.ws/publications/10.3897/j.moem.7.2.76286},
number = {2},
pages = {73--78},
doi = {10.3897/j.moem.7.2.76286}
}
MLA
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MLA
Kozlov, Roman Yu., et al. “Growth of 100 mm indium antimonide single crystals by modified Czochralski technique.” Modern Electronic Materials, vol. 7, no. 2, Jun. 2021, pp. 73-78. https://moem.colab.ws/publications/10.3897/j.moem.7.2.76286.
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Keywords

100 mm diameter
Czochralski technique
EPD
heating unit
homogeneity
indium antimonide
single crystal
technology

Abstract

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches. So far up to 75 mm indium antimonide single crystals have been grown in Russia.

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