Home / Articles / Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness

Andrey N. Aleshin 1
Andrey N. Aleshin
, 
Nikolay V. Zenchenko 1
Nikolay V. Zenchenko
, 
Oleg A. Ruban1 1
Oleg A. Ruban1
1 Institute of Ultra High Frequency Semiconductor Electronics of RAS, 7, Bd 5, Nagorny Proezd, Moscow 117105, Russia
10.3897/j.moem.7.2.73289
Published 30 June 2021
Communication , Volume 7, Issue 2, 45-51
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Aleshin A. N., Zenchenko N. V., Ruban1 O. A. Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness // Modern Electronic Materials. 2021. Vol. 7. No. 2. pp. 45-51.
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Aleshin A. N., Zenchenko N. V., Ruban1 O. A. Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness // Modern Electronic Materials. 2021. Vol. 7. No. 2. pp. 45-51.
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TY - JOUR
DO - 10.3897/j.moem.7.2.73289
UR - https://moem.colab.ws/publications/10.3897/j.moem.7.2.73289
TI - Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
T2 - Modern Electronic Materials
AU - Aleshin, Andrey N.
AU - Zenchenko, Nikolay V.
AU - Ruban1, Oleg A.
PY - 2021
DA - 2021/06/30
PB - НИТУ МИСИС
SP - 45-51
IS - 2
VL - 7
ER -
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@article{2021_Aleshin,
author = {Andrey N. Aleshin and Nikolay V. Zenchenko and Oleg A. Ruban1},
title = {Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness},
journal = {Modern Electronic Materials},
year = {2021},
volume = {7},
publisher = {НИТУ МИСИС},
month = {Jun},
url = {https://moem.colab.ws/publications/10.3897/j.moem.7.2.73289},
number = {2},
pages = {45--51},
doi = {10.3897/j.moem.7.2.73289}
}
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Aleshin, Andrey N., et al. “Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness.” Modern Electronic Materials, vol. 7, no. 2, Jun. 2021, pp. 45-51. https://moem.colab.ws/publications/10.3897/j.moem.7.2.73289.
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Keywords

bipolar mode
conductive phase
finite elements method
heat loss
Maxwell equations

Abstract

The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filament has been considered as the highly conductive Hf ion enriched HfOx phase (x < 2) whose structure is similar to a Magneli phase. In this work a mechanism has been developed describing the formation, growth and dissolution of the HfOx phase in bipolar mode of memristor operation which provides for oxygen vacancy flux control. The conductive filament has a cylindrical shape with the radius varying within 5–10 nm. An increase in the thickness of the conductive filament leads to an increase in the area of the hysteresis loop of the I–V curve due to an increase in the energy output during memristor operation. A model has been developed which allows quantitative calculations and hence can be used for the design of bipolar memristors and assessment of memristor heat loss during operation.

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