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Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers

Svetlana S. Kormilitsina 1
Svetlana S. Kormilitsina
, 
Elena V. Molodtsova 1
Elena V. Molodtsova
, 
Stanislav N. Knyzev 1
Stanislav N. Knyzev
, 
Roman Yu. Kozlov 1
Roman Yu. Kozlov
, 
Dmitry A. Zavrazhin 1
Dmitry A. Zavrazhin
, 
Elena V. Zharikova 1
Elena V. Zharikova
, 
Yuri V. Syrov 2
Yuri V. Syrov
1 Federal State Research and Develpment Institute of Rare Metal Industry (Giredmet JSC), 2 Elektrodnaya Str., Moscow 111524, Russia
2 MIREA – Russian Technological University, 78 Vernadsky Ave., Moscow 119454, Russia
10.3897/j.moem.6.4.64991
Published 30 December 2020
Communication , Volume 6, Issue 4, 147-153
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Kormilitsina S. S. et al. Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers // Modern Electronic Materials. 2020. Vol. 6. No. 4. pp. 147-153.
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Kormilitsina S. S., Molodtsova E. V., Knyzev S. N., Kozlov R. Y., Zavrazhin D. A., Zharikova E. V., Syrov Y. V. Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers // Modern Electronic Materials. 2020. Vol. 6. No. 4. pp. 147-153.
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TY - JOUR
DO - 10.3897/j.moem.6.4.64991
UR - https://moem.colab.ws/publications/10.3897/j.moem.6.4.64991
TI - Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers
T2 - Modern Electronic Materials
AU - Kormilitsina, Svetlana S.
AU - Molodtsova, Elena V.
AU - Knyzev, Stanislav N.
AU - Kozlov, Roman Yu.
AU - Zavrazhin, Dmitry A.
AU - Zharikova, Elena V.
AU - Syrov, Yuri V.
PY - 2020
DA - 2020/12/30
PB - НИТУ МИСИС
SP - 147-153
IS - 4
VL - 6
ER -
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@article{2020_Kormilitsina,
author = {Svetlana S. Kormilitsina and Elena V. Molodtsova and Stanislav N. Knyzev and Roman Yu. Kozlov and Dmitry A. Zavrazhin and Elena V. Zharikova and Yuri V. Syrov},
title = {Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers},
journal = {Modern Electronic Materials},
year = {2020},
volume = {6},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.6.4.64991},
number = {4},
pages = {147--153},
doi = {10.3897/j.moem.6.4.64991}
}
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Kormilitsina, Svetlana S., et al. “Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers.” Modern Electronic Materials, vol. 6, no. 4, Dec. 2020, pp. 147-153. https://moem.colab.ws/publications/10.3897/j.moem.6.4.64991.
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Keywords

chemical polishing
crystallographic orientation
Czochralsky method
indium antimonide
mechanical treatment
thin wafers
wafer roughness
yield strength

Abstract

Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment cycle is used (grinding + chemical polishing) the strength of the InSb wafers increases twofold (from 3.0 to 6.4 kg/mm2). We show that the strength dependence on mechanical treatment type for (100) wafers is similar to that for (111) wafers, the strength of (111) wafers being 2 times higher. The roughness of the thin wafers after the full mechanical treatment cycle has been measured using contact profilometry. After the full mechanical treatment cycle the roughness of the InSb wafers Ra decreases from 0.6 to 0.04 mm leading to general surface smoothening. We have compared the strength and roughness between (100) InSb and GaAs wafers. The roughness of InSb and GaAs wafers after the full mechanical treatment cycle decreases significantly: by 10 times for InSb due to the general surface smoothening and by 3 times for GaAs (Rz from 2.4 to 0.8 mm) due to a reduction of the peak roughness component. The full mechanical treatment cycle increases the strength of InSb wafers by removing damaged layers through the sequence of operations and reducing the risk of mechanical damage development.

References

1.
1 Grinchenko L.Ya., Ponomarenko V.P., Filachev A.M. Current state and outlookof Ir photoelectronics development. Prikladnaya fizika, 2009; (2): 57–2. (In Russ.)
2.
2 Intel and QinetiQ Collaborate on Transistor Research. URL: http://www.intel.com/pressroom/arihive/releass/2005/20050208corp.htm (accessed: 28.10.2020).
3.
Obukhov I., Gorokh G., Lozovenko A., Smirnova E.
Nanoindustry Russia, 2017
4.
4 Electronics and Materials Corporation Limited. URL: http://eandmint.co.jp/eng/wafer/product_detail/product_insb.html (accessed: 28.10.2020).
5.
5 Trail: Wafer Technology Ltd. URL: http://www.wafertech.co.uk (accessed: 28.10.2020).
6.
6 MTI Corporation. URL: http://www.mtixtl.com/ (accessed: 28.10.2020).
7.
7 Galaxy Compound Semiconductors, Inc. URL: http://www.galaxywafer.com/ (accessed: 28.10.2020).
8.
8 Xiamen Powerway Advanced Material Co, Ltd. URL: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html (accessed: 28.10.2020).
9.
9 Akchurin R.Kh., Marmalyuk A.A. MOS-gidridnaya epitaksiya v tekhnologii materialov fotoniki i elektroniki [MOS hydride epitaxy in photonics and electronics materials technology]. Moscow: Tekhnosfera, 2018: 488. (In Russ.)
10.
10 Gorelik S.S., Dashevskii M.Ya. Materialovedenie poluprovodnikov i dielektrikov [Materials science of semiconductors and dielectrics]. Moscow: MISiS, 2003: 480. (In Russ.)
11.
INVESTIGATION ON THE PROPERTIES OF LARGE [100]−ORIENTED INSB SINGLE CRYSTALS GROWN BY CZOHRALSKI METHOD
Ezhlov V.S., Milvidskaya A.G., Molodtsova E.V., Kolchina G.P., Mezhennyi M.V., Resnick V.Y.
Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, 2015
12.
12 Milvidskii M.G. Poluprovodnikovye materialy v sovremennoi elektronike [Semiconductor materials in modern electronics]. Moscow: Nauka, 1986: 143. (In Russ.)
13.
13 Boltar K.O., Vlasov P.V., Eroshenkov V.V., Lopuhin A.A. Research of photodiodes with a leakage current in the InSb FPA. Prikladnaya fizika, 2014; (4): 45–50. (In Russ.)
14.
Biryukov E.N., Khokhlov A.I., Teplova T.B., Lapshin I.V.
Mining Informational and Analytical Bulletin, 2018
15.
15 Zakharov B.G. Issledovanie i razrabotka tekhnologii i sposobov polucheniya podlozhek i ehpitaksial’nykh sloev poluprovodnikovykh materialov s vysokim strukturnym sovershenstvom [Research and development of technology and methods for producing substrates and epitaxial layers of semiconductor materials with high structural perfection]. Diss. … Dr. Sci. (Eng.). Kaluga, 1984: 423. (In Russ.)
16.
16 Milvidskii M.G., Osvenskii V.B. Strukturnye defekty v monokristallakh poluprovodnikov [Structural defects in single crystals of semiconductors]. Moscow: Metallurgiya, 1984: 256. (In Russ.)
17.
17 Patent 2482228 (RF) Sposob polucheniya krupnogabaritnykh kristallov antimonida indiya InSb [A method of obtaining large crystals of indium antimonide InSb]. V.S. Ezhlov, A.G. Mil’vidskaya, E.V. Molodtsova, G.P. Kolchina, M.V. Mezhennyi, V.Ya. Reznik, 2012. (In Russ.)
18.
18 Fost J. Travlenie poluprovodnikov [Semiconductor etching]. Moscow: Mir, 1965: 382. (In Russ.)
19.
19 Amelinks S. Metody pryamogo nablyudeniya dislokatsii [Direct observation of dislocations]. Moscow: Mir, 1968: 438. (In Russ.)
20.
20 van der Pauw L.J. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep., 1958; 13: 220–224. URL: http://electron.mit.edu/~gsteele/vanderpauw/vanderpauw.pdf
21.
21 Kontsevoi Yu.A., Litvinov Yu.M., Fattakhov Eh.A. Plastichnost’ i prochnost’ poluprovodnikovykh materialov i struktur [Plasticity and strength of semiconductor materials and structures]. Moscow: Radio i svyaz, 1982: 239 p. (In Russ.)
22.
22 Mal’kov O.V., Litvinenko A.V. Izmerenie parametrov sherokhovatosti poverkhnosti detali [Measurement of the surface roughness parameters of the part]. Moscow: Bauman MSTU, 2012: 22. (In Russ.)
23.
23 Khusu A.P., Vitenberg Yu.R., Pal’mov V.A. Sherokhovatost’ poverkhnostei (teoretiko-veroyatnostnyi podkhod) [Surface roughness (probability-theoretical approach)]. Moscow: Nauka, 1975: 344. (In Russ.)
24.
24 Nazarov Yu.F., Shkilko A.M., Tikhonenko V.V., Kompaneets I.V. Methods of research and control of surface roughness of metals and alloys. Fizicheskaya inzheneriya poverkhnosti, 2007; 5(3–4): 207–216. (In Russ.)
25.
25 Karban V.I., Borzanov Yu.I. Obrabotka monokristallov v mikroehlektronike [Processing of single crystals in microelectronics]. Moscow: Radio i svyaz, 1988: 103. (In Russ.)