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Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Tatyana G. Yugova1 1
Tatyana G. Yugova1
, 
Aleksandr G. Belov1 1
Aleksandr G. Belov1
, 
Vladimir E. Kanevskii1 1
Vladimir E. Kanevskii1
, 
Evgeniya I. Kladova1 1
Evgeniya I. Kladova1
, 
Stanislav N. Knyazev1 1
Stanislav N. Knyazev1
1 1
10.3897/j.moem.6.3.64492
Published 30 September 2020
Communication , Volume 6, Issue 3, 85-89
6
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Yugova1 T. G. et al. Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs // Modern Electronic Materials. 2020. Vol. 6. No. 3. pp. 85-89.
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Yugova1 T. G., Belov1 A. G., Kanevskii1 V. E., Kladova1 E. I., Knyazev1 S. N. Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs // Modern Electronic Materials. 2020. Vol. 6. No. 3. pp. 85-89.
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TY - JOUR
DO - 10.3897/j.moem.6.3.64492
UR - https://moem.colab.ws/publications/10.3897/j.moem.6.3.64492
TI - Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs
T2 - Modern Electronic Materials
AU - Yugova1, Tatyana G.
AU - Belov1, Aleksandr G.
AU - Kanevskii1, Vladimir E.
AU - Kladova1, Evgeniya I.
AU - Knyazev1, Stanislav N.
PY - 2020
DA - 2020/09/30
PB - НИТУ МИСИС
SP - 85-89
IS - 3
VL - 6
ER -
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@article{2020_Yugova1,
author = {Tatyana G. Yugova1 and Aleksandr G. Belov1 and Vladimir E. Kanevskii1 and Evgeniya I. Kladova1 and Stanislav N. Knyazev1},
title = {Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs},
journal = {Modern Electronic Materials},
year = {2020},
volume = {6},
publisher = {НИТУ МИСИС},
month = {Sep},
url = {https://moem.colab.ws/publications/10.3897/j.moem.6.3.64492},
number = {3},
pages = {85--89},
doi = {10.3897/j.moem.6.3.64492}
}
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Yugova1, Tatyana G., et al. “Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs.” Modern Electronic Materials, vol. 6, no. 3, Sep. 2020, pp. 85-89. https://moem.colab.ws/publications/10.3897/j.moem.6.3.64492.
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Keywords

electron concentration
gallium arsenide
Hall effect
plasmon–phonon coupling.
reflection spectrum

Abstract

A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into account the pasmon–phonon coupling, otherwise free electron concentration will be overestimated. We have calculated electron concentration Nopt as a function of characteristic wave number ν+ which is described by a second order polynomial.

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