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Review on the book Nuclear Doping of Semiconductor Materials

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Published 31 December 2019
Communication , Volume 5, Issue 4, 187-188
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Sobolev N. A. Review on the book Nuclear Doping of Semiconductor Materials // Modern Electronic Materials. 2019. Vol. 5. No. 4. pp. 187-188.
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Sobolev N. A. Review on the book Nuclear Doping of Semiconductor Materials // Modern Electronic Materials. 2019. Vol. 5. No. 4. pp. 187-188.
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RIS
TY - JOUR
DO - 10.3897/j.moem.5.4.54006
UR - https://moem.colab.ws/publications/10.3897/j.moem.5.4.54006
TI - Review on the book Nuclear Doping of Semiconductor Materials
T2 - Modern Electronic Materials
AU - Sobolev, Nikolai A.
PY - 2019
DA - 2019/12/31
PB - НИТУ МИСИС
SP - 187-188
IS - 4
VL - 5
ER -
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@article{2019_Sobolev,
author = {Nikolai A. Sobolev},
title = {Review on the book Nuclear Doping of Semiconductor Materials},
journal = {Modern Electronic Materials},
year = {2019},
volume = {5},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.5.4.54006},
number = {4},
pages = {187--188},
doi = {10.3897/j.moem.5.4.54006}
}
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Sobolev, Nikolai A.. “Review on the book Nuclear Doping of Semiconductor Materials.” Modern Electronic Materials, vol. 5, no. 4, Dec. 2019, pp. 187-188. https://moem.colab.ws/publications/10.3897/j.moem.5.4.54006.
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Keywords

annealing
doping
electrophysical properties
neutron irradiation
nuclear reactions
radiation defects
semiconductors
silicon single crystals

Abstract

Review on the book Kharchenko V. A., Smirnov L. S., Solov’ev S. P., Stas’ V. F. Nuclear Doping of Semiconductor Materials (second edition, revised). Executive Editor, Dr. Sci. (Engineering) V.A. Kharchenko

References

1.
Lark-Horovitz K. Nucleon bombarded semiconductors. In: Reading conference on semiconductor materials. London (England): Butterworth’s Scientific Publications 1951: 47–78.
2.
Smirnov L.S., Solov’ev S.P., Stas’ V.F., Kharchenko V.A. Doping of semiconductors by nuclear reaction method. Novosibirsk: Nauka, 1981, 182 pp. [In Russ.]
3.
Kharchenko V.A., Soloviev S.P. Radiation doping of silicon. Fizika i tekhnika poluprovodnikov 1971 5(8): 1641–1643. [In Russ.]