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Control of yellow photoluminescence in AlGaN/GaN heterostructures

Nadezhda B. Gladysheva 1
Nadezhda B. Gladysheva
, 
Vadim V. Gruzdov 1
Vadim V. Gruzdov
, 
Yurii V. Kolkovskii 1
Yurii V. Kolkovskii
, 
Yulii A. Kontsevoy 1, 2
Yulii A. Kontsevoy
, 
Evgenii F. Pevtsov 2
Evgenii F. Pevtsov
1 JSC «S&PE «Pulsar», 27 Okruzhnoy proezd, Moscow 105187, Russia
2 Moscow Technological University (MIREA), 78 Vernadsky Ave., Moscow 119454, Russia
10.3897/j.moem.5.2.51391
Published 1 June 2019
Communication , Volume 5, Issue 2, 87-89
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Gladysheva N. B. et al. Control of yellow photoluminescence in AlGaN/GaN heterostructures // Modern Electronic Materials. 2019. Vol. 5. No. 2. pp. 87-89.
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Gladysheva N. B., Gruzdov V. V., Kolkovskii Y. V., Kontsevoy Y. A., Pevtsov E. F. Control of yellow photoluminescence in AlGaN/GaN heterostructures // Modern Electronic Materials. 2019. Vol. 5. No. 2. pp. 87-89.
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TY - JOUR
DO - 10.3897/j.moem.5.2.51391
UR - https://moem.colab.ws/publications/10.3897/j.moem.5.2.51391
TI - Control of yellow photoluminescence in AlGaN/GaN heterostructures
T2 - Modern Electronic Materials
AU - Gladysheva, Nadezhda B.
AU - Gruzdov, Vadim V.
AU - Kolkovskii, Yurii V.
AU - Kontsevoy, Yulii A.
AU - Pevtsov, Evgenii F.
PY - 2019
DA - 2019/06/01
PB - НИТУ МИСИС
SP - 87-89
IS - 2
VL - 5
ER -
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@article{2019_Gladysheva,
author = {Nadezhda B. Gladysheva and Vadim V. Gruzdov and Yurii V. Kolkovskii and Yulii A. Kontsevoy and Evgenii F. Pevtsov},
title = {Control of yellow photoluminescence in AlGaN/GaN heterostructures},
journal = {Modern Electronic Materials},
year = {2019},
volume = {5},
publisher = {НИТУ МИСИС},
month = {Jun},
url = {https://moem.colab.ws/publications/10.3897/j.moem.5.2.51391},
number = {2},
pages = {87--89},
doi = {10.3897/j.moem.5.2.51391}
}
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Gladysheva, Nadezhda B., et al. “Control of yellow photoluminescence in AlGaN/GaN heterostructures.” Modern Electronic Materials, vol. 5, no. 2, Jun. 2019, pp. 87-89. https://moem.colab.ws/publications/10.3897/j.moem.5.2.51391.
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Keywords

AlGaN/GaN/SiC and AlGaN/GaN/Al2O3 heterostructures
fast control of photoluminescence
photoluminescence mapping
yellow photoluminescence in AlGaN/GaN heterostructures

Abstract

Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation.

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