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Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon

, 
Ilya M. Anfimov 1
Ilya M. Anfimov
, 
Vladimir S. Berdnikov 2
Vladimir S. Berdnikov
, 
Tatyana V. Kritskaya 3
Tatyana V. Kritskaya
1 RIIS Ltd, 3 Krymsky Val, Moscow 119049, Russia
2 Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, 1 Academician Lavrentieva Ave., Novosibirsk 630090, Russia
3 Engineering Institute of Zaporizhzhya National University, 226 Soborny Ave., Zaporizhzhia 69006, Ukraine
10.3897/j.moem.5.1.46315
Published 1 March 2019
Communication , Volume 5, Issue 1, 27-32
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Kobeleva S. P. et al. Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon // Modern Electronic Materials. 2019. Vol. 5. No. 1. pp. 27-32.
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Kobeleva S. P., Anfimov I. M., Berdnikov V. S., Kritskaya T. V. Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon // Modern Electronic Materials. 2019. Vol. 5. No. 1. pp. 27-32.
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TY - JOUR
DO - 10.3897/j.moem.5.1.46315
UR - https://moem.colab.ws/publications/10.3897/j.moem.5.1.46315
TI - Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon
T2 - Modern Electronic Materials
AU - Kobeleva, Svetlana P.
AU - Anfimov, Ilya M.
AU - Berdnikov, Vladimir S.
AU - Kritskaya, Tatyana V.
PY - 2019
DA - 2019/03/01
PB - НИТУ МИСИС
SP - 27-32
IS - 1
VL - 5
ER -
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@article{2019_Kobeleva,
author = {Svetlana P. Kobeleva and Ilya M. Anfimov and Vladimir S. Berdnikov and Tatyana V. Kritskaya},
title = {Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon},
journal = {Modern Electronic Materials},
year = {2019},
volume = {5},
publisher = {НИТУ МИСИС},
month = {Mar},
url = {https://moem.colab.ws/publications/10.3897/j.moem.5.1.46315},
number = {1},
pages = {27--32},
doi = {10.3897/j.moem.5.1.46315}
}
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Kobeleva, Svetlana P., et al. “Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon.” Modern Electronic Materials, vol. 5, no. 1, Mar. 2019, pp. 27-32. https://moem.colab.ws/publications/10.3897/j.moem.5.1.46315.
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Keywords

Czochralski single crystal growth
electrical resistivity
electrical resistivity distribution maps
growth process simulation
single crystal silicon

Abstract

Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals.

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