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Study of the sensitivity of semiconductor pixel structures using focused laser irradiation

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1 Research and Development Institute of Scientific Instruments, Join-Stock Company, Lytkarino, Russia
10.3897/j.moem.12.1.189317
Published 23 April 2026
Article , Volume 12, Issue 1, 43-52
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Sharapov A. A. et al. Study of the sensitivity of semiconductor pixel structures using focused laser irradiation // Modern Electronic Materials. 2026. Vol. 12. No. 1. pp. 43-52.
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Sharapov A. A., Sidelev A. V., Tapero K. I., Zemtsov A. E. Study of the sensitivity of semiconductor pixel structures using focused laser irradiation // Modern Electronic Materials. 2026. Vol. 12. No. 1. pp. 43-52.
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TY - JOUR
DO - 10.3897/j.moem.12.1.189317
UR - https://moem.colab.ws/publications/10.3897/j.moem.12.1.189317
TI - Study of the sensitivity of semiconductor pixel structures using focused laser irradiation
T2 - Modern Electronic Materials
AU - Sharapov, Artyom A.
AU - Sidelev, Alexey V.
AU - Tapero, Konstantin I.
AU - Zemtsov, Artyom E.
PY - 2026
DA - 2026/04/23
PB - НИТУ МИСИС
SP - 43-52
IS - 1
VL - 12
ER -
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@article{2026_Sharapov,
author = {Artyom A. Sharapov and Alexey V. Sidelev and Konstantin I. Tapero and Artyom E. Zemtsov},
title = {Study of the sensitivity of semiconductor pixel structures using focused laser irradiation},
journal = {Modern Electronic Materials},
year = {2026},
volume = {12},
publisher = {НИТУ МИСИС},
month = {Apr},
url = {https://moem.colab.ws/publications/10.3897/j.moem.12.1.189317},
number = {1},
pages = {43--52},
doi = {10.3897/j.moem.12.1.189317}
}
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Sharapov, Artyom A., et al. “Study of the sensitivity of semiconductor pixel structures using focused laser irradiation.” Modern Electronic Materials, vol. 12, no. 1, Apr. 2026, pp. 43-52. https://moem.colab.ws/publications/10.3897/j.moem.12.1.189317.
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Keywords

focused radiation
laser irradiation
radiation effects
radiation hardness
semiconductor detectors

Abstract

Results of focused laser irradiation of semiconductor structures having relatively small sizes of discrete components on the crystal were presented. Different laser beam depth profiles were obtained in the experiments via different lenses. The focused beam size was varied in a range of 1.4 to 3.6 μm at the beam waist. The test specimens were position-sensitive detectors with small pixel size (~15 μm). We showed that the use of different lenses with constant pulse energy and duration yields different results in sensitivity assessment. Conclusions were made as about the limitations in the application of precision irradiation methods to semiconductor structure.