Home / Articles / Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum

Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum

Nikolay A. Bosak 1
Nikolay A. Bosak
, 
Maxim V. Bushinsky 2
Maxim V. Bushinsky
, 
Liudmila V. Baran 3
Liudmila V. Baran
, 
Victoria V. Malyutina-Bronskaya 4
Victoria V. Malyutina-Bronskaya
, 
Olga S. Mantytskaya 2
Olga S. Mantytskaya
, 
1 B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimosti Ave., Minsk 220072, Republic of Belarus
2 Scientific-Practical Materials Research Centre of the NAS of Belarus, 19 P.Brovka Str., Minsk 220072, Republic of Belarus
3 Belarusian State University, 4 Nezavisimosti Ave., Minsk 220030, Republic of Belarus
4 SSPA “Optics, Optoelectronics and Laser Technology”, 68 Nezavisimosti Ave., Minsk 220072, Republic of Belarus
10.3897/j.moem.11.4.152006
Published 30 December 2025
Communication , Volume 11, Issue 4, 243-248
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Bosak N. A. et al. Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum // Modern Electronic Materials. 2025. Vol. 11. No. 4. pp. 243-248.
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Bosak N. A., Bushinsky M. V., Baran L. V., Malyutina-Bronskaya V. V., Mantytskaya O. S., Kuzmitskaya H. S. Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum // Modern Electronic Materials. 2025. Vol. 11. No. 4. pp. 243-248.
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TY - JOUR
DO - 10.3897/j.moem.11.4.152006
UR - https://moem.colab.ws/publications/10.3897/j.moem.11.4.152006
TI - Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum
T2 - Modern Electronic Materials
AU - Bosak, Nikolay A.
AU - Bushinsky, Maxim V.
AU - Baran, Liudmila V.
AU - Malyutina-Bronskaya, Victoria V.
AU - Mantytskaya, Olga S.
AU - Kuzmitskaya, Hanna S.
PY - 2025
DA - 2025/12/30
PB - НИТУ МИСИС
SP - 243-248
IS - 4
VL - 11
ER -
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@article{2025_Bosak,
author = {Nikolay A. Bosak and Maxim V. Bushinsky and Liudmila V. Baran and Victoria V. Malyutina-Bronskaya and Olga S. Mantytskaya and Hanna S. Kuzmitskaya},
title = {Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum},
journal = {Modern Electronic Materials},
year = {2025},
volume = {11},
publisher = {НИТУ МИСИС},
month = {Dec},
url = {https://moem.colab.ws/publications/10.3897/j.moem.11.4.152006},
number = {4},
pages = {243--248},
doi = {10.3897/j.moem.11.4.152006}
}
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Bosak, Nikolay A., et al. “Optical and photoelectrical properties of La0.5Sr0.5Co0.9Ni0.1O3 films obtained by high-frequency laser deposition in vacuum.” Modern Electronic Materials, vol. 11, no. 4, Dec. 2025, pp. 243-248. https://moem.colab.ws/publications/10.3897/j.moem.11.4.152006.
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Keywords

electrophysical characteristics
high-frequency laser irradiation
the structure of thin films
transmission and reflection spectra

Abstract

Nanostructured thin films on silicon and glass substrates have been synthesized by high-frequency pulse-periodic action of laser radiation with a wavelength of 1.064 μm. The morphology of La0.5Sr0.5Co0.9Ni0.1O3 thin films investigated using atomic force microscopy showed that films with a developed surface structure have been obtained. Transmission spectra of La0.5Sr0.5Co0.9Ni0.1O3 films were obtained in the visible, near and mid-IR regions. The maximum transmittance of the laser-deposited La0.5Sr0.5Co0.9 Ni0.1O3 film on silicon is observed in the near IR region of the spectrum and reaches the value of 59 % at a wavelength of λ = 1182 nm. Electrophysical characteristics of La0.5Sr0.5Co0.9Ni0.1O3/Si structures were analyzed. When measuring the longitudinal current-voltage characteristic of the La0.5Sr0.5Co0.9 Ni0.1O3/Si structure under the influence of laser radiation with a wavelength from 405 nm to 1064 nm (at a voltage of more than 1.5 V), a photoelectric effect have been observed. The measured capacitance-voltage characteristics of the studied structure have demonstrated the photo-ferroelectric properties.

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