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Growth chamber gas dynamics in Cz silicon single crystal growth process

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1 Ishlinsky Institute for Problems in Mechanics of the Russian Academy of Sciences, 101-1 Vernadskogo Ave., Moscow 119526, Russian Federation
10.3897/j.moem.10.3.140627
Published 14 October 2024
Communication , Volume 10, Issue 3, 185-193
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Verezub N. A., Prostomolotov A. I. Growth chamber gas dynamics in Cz silicon single crystal growth process // Modern Electronic Materials. 2024. Vol. 10. No. 3. pp. 185-193.
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Verezub N. A., Prostomolotov A. I. Growth chamber gas dynamics in Cz silicon single crystal growth process // Modern Electronic Materials. 2024. Vol. 10. No. 3. pp. 185-193.
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TY - JOUR
DO - 10.3897/j.moem.10.3.140627
UR - https://moem.colab.ws/publications/10.3897/j.moem.10.3.140627
TI - Growth chamber gas dynamics in Cz silicon single crystal growth process
T2 - Modern Electronic Materials
AU - Verezub, Nataliya A.
AU - Prostomolotov, Anatoly I.
PY - 2024
DA - 2024/10/14
PB - НИТУ МИСИС
SP - 185-193
IS - 3
VL - 10
ER -
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@article{2024_Verezub,
author = {Nataliya A. Verezub and Anatoly I. Prostomolotov},
title = {Growth chamber gas dynamics in Cz silicon single crystal growth process},
journal = {Modern Electronic Materials},
year = {2024},
volume = {10},
publisher = {НИТУ МИСИС},
month = {Oct},
url = {https://moem.colab.ws/publications/10.3897/j.moem.10.3.140627},
number = {3},
pages = {185--193},
doi = {10.3897/j.moem.10.3.140627}
}
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Verezub, Nataliya A., and Anatoly I. Prostomolotov. “Growth chamber gas dynamics in Cz silicon single crystal growth process.” Modern Electronic Materials, vol. 10, no. 3, Oct. 2024, pp. 185-193. https://moem.colab.ws/publications/10.3897/j.moem.10.3.140627.
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Keywords

argon
Czochralski method
gas dynamics
modeling
silicon monoxide

Abstract

Mathematical simulation results for inert gas (argon) dynamics in the rarefied atmosphere of Redmet-10 Cz single crystal silicon growth furnace chamber have been reported. Gas flows in cold (room temperature) and hot (growth process) chambers have been analyzed. Convective gas flows have been considered for two growth chamber gas supply options: basic supply, i.e., through the top central inlet hole only, and combined, i.e., with additional gas supply through the lateral inlet hole. Gas outlet is through the growth chamber bottom outlet hole for both options. For the cold chamber option, forced convection has been studied using the incompressible ideal gas model. For hot chamber, both the nonisothermal compressible ideal gas model and the weakly compressible gas model in the Boussinesq approximation have been used for studying the vortex structure produced by a joint action of forced and thermal-gravitational convection. The effect of different gas inlet methods on the convective transport of silicon monoxide evaporating from the free melt surface has been discussed.

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