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First-principles modeling of electron-phonon scattering rates in graphene

1 Belarusian State University of Informatics and Radioelectronics, 6 P. Brovka Str., Minsk 220013, Republic of Belarus
10.3897/j.moem.10.3.134474
Published 14 October 2024
Communication , Volume 10, Issue 3, 177-184
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Mishchanka V. N. First-principles modeling of electron-phonon scattering rates in graphene // Modern Electronic Materials. 2024. Vol. 10. No. 3. pp. 177-184.
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Mishchanka V. N. First-principles modeling of electron-phonon scattering rates in graphene // Modern Electronic Materials. 2024. Vol. 10. No. 3. pp. 177-184.
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TY - JOUR
DO - 10.3897/j.moem.10.3.134474
UR - https://moem.colab.ws/publications/10.3897/j.moem.10.3.134474
TI - First-principles modeling of electron-phonon scattering rates in graphene
T2 - Modern Electronic Materials
AU - Mishchanka, Valery N.
PY - 2024
DA - 2024/10/14
PB - НИТУ МИСИС
SP - 177-184
IS - 3
VL - 10
ER -
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@article{2024_Mishchanka,
author = {Valery N. Mishchanka},
title = {First-principles modeling of electron-phonon scattering rates in graphene},
journal = {Modern Electronic Materials},
year = {2024},
volume = {10},
publisher = {НИТУ МИСИС},
month = {Oct},
url = {https://moem.colab.ws/publications/10.3897/j.moem.10.3.134474},
number = {3},
pages = {177--184},
doi = {10.3897/j.moem.10.3.134474}
}
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Mishchanka, Valery N.. “First-principles modeling of electron-phonon scattering rates in graphene.” Modern Electronic Materials, vol. 10, no. 3, Oct. 2024, pp. 177-184. https://moem.colab.ws/publications/10.3897/j.moem.10.3.134474.
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Keywords

graphene
modelling
phonon
semiconductor structure

Abstract

Graphene, which has a high mobility of charge carriers, which exceeds the mobility of charge carriers for all known materials, is currently considered as one of the most promising materials for the creation of new semiconductor devices. The results of modeling of electron scattering rates are presented for the acoustic and optical phonons in a single layer of graphene without a substrate for small values of energy, which do not exceed 1 eV. When modeling these rates, variants of both emission and absorption of phonons are considered. The obtained dependences of the charge carrier scattering rates will allow us to study the main characteristics of charge carrier transport in semiconductor structures containing graphene layers by modeling using the Monte Carlo method. Characteristics and parameters of graphene can be used to create new heterostructure devices with improved output characteristics.

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